SQSQh: 1H‐detected SQ–SQ experiment for determination of signed silicon–carbon coupling constants

A new variant of SQ–SQ pulse sequence (SQSQh) for relative sign determination and detection of small silicon–carbon couplings over more than one bond is presented. In the SQSQh sequence, proton detection replaces carbon detection used in the original SQ–SQ pulse sequence (SQSQc). The theoretical gain in sensitivity was experimentally tested on two samples (trimethylsiloxyethane, 1, and 1,2,4‐tris(trimethylsiloxy)benzene, 2), the experimentally found gain provided by the SQSQh over the SQSQc method varied between 6 and 8. The method can be applied to linear spin systems, i.e. to systems where the silicon is coupled to the carbon in question and to any hydrogen not necessarily bonded to the carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Analysis of the sensitivity to the electrochemical potential of the width of a metallic nanoconstriction

In relation to a metallic nanowire in the presence of an electrochemical potential, the sensitivity to this potential of the nanowire width is evaluated by defining and calculating a suitable parameter that can be regarded as a normalized gradient, this gradient being the derivative of the above-mentioned width with respect to the electrochemical potential.     

不同气氛下SiOx纳米线的制备及形貌、红外、光致发光研究

以N₂/H₂、N₂或NH₃为载气,利用碳辅助化学气相沉积法,常压1140℃下在石英衬底上制备了大量直径为20—300 nm,长数百微米的非晶SiO_x纳米线.制备得到的纳米线具有高度定向生长的特性.利用透射电子显微镜、扫描电子显微镜及电子能谱对SiO_x纳米线的形貌及组分进行了分析,Si与O原子之比为1∶18.傅里叶红外吸收谱显示了非晶氧化硅的三个特征峰（482,806和1095 cm^-1）及1132 cm^-1无序氧化硅结构的强吸收峰.SiO_x纳米线光致发光光谱（PL）在440 nm（283 eV）处具有较强的荧光峰;N₂为载气生长的SiO_x纳米线的PL峰强比NH₃为载气生长的SiO_x纳米线峰强大四个数量级. 关键词： x纳米线')" href="#">SiO_x纳米线 碳辅助化学气相沉积法 傅里叶红外吸收 光致发光     

ZnO纳米线/棒阵列的水热法制备及应用研究进展

氧化锌(ZnO)纳米线/棒阵列的质量决定了所构建光电器件的性能. 为了制备出比表面积更大、垂直性更好以及无根部融合的高质量ZnO纳米线/棒阵列, 本文概述了近几年两步水热法可控制备ZnO纳米线/棒阵列的研究进展, 分别探讨了种子层、生长液和生长方法对纳米线/棒阵列形貌的影响, 详细分析了氨水、六次甲基四胺和聚乙烯亚胺对于促进纳米线/棒阵列生长的作用机理, 提出了通过微流控技术可控制备ZnO纳米线阵列提高纳米线生长效率的方法. 最后介绍了ZnO纳米线/棒阵列的形貌对于提高染料敏化太阳能电池、纳米发电机、气体传感器和场发射器件性能的重要作用, 并对未来两步水热法制备ZnO纳米线/棒阵列的发展趋势进行了展望.     

退火对TiO2纳米管/线复合阵列表面光电性质的影响

采用阳极氧化法制备了TiO2纳米管/线复合阵列. 利用表面光电压谱(SPS)和场诱导表面光电压谱(FISPS)研究了退火对TiO2纳米管/线复合阵列表面光电性质的影响. 结果表明, TiO2纳米管/线复合阵列在晶化前后的导带边缘均出现了束缚激子态, 晶化前由于自建场较弱, 束缚激子态能在正负电场作用下发生不对称偏转; 晶化后, 晶体结构从非晶态变为晶态, 自建场增强, 束缚激子态对正电场敏感并表现出明显的光伏响应, 而在负电场作用下束缚激子态没有任何光伏响应.     

Er掺杂SiNP电子结构和光学性质的第一性原理研究

当硅基发光材料得到广泛应用时,为了给硅基材料的设计及应用提供理论依据,利用基于密度泛函理论的第一性原理,对Er掺杂在Si纳米晶粒不同位置的结构稳定性、电子与光学性质进行了研究.结果表明:Er掺杂在Si纳米晶粒的中心位置时,结构最稳定;Er掺杂后的Si纳米晶粒引入了杂质能级,最终导致禁带宽度变窄;掺杂后的Si纳米晶粒在低能区出现了一个新的吸收峰,当Er原子向表面位置移动时,新的吸收峰峰值逐渐减小,甚至消失.     

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.     

微波法合成一维结构Cd(OH)2螺旋形纳米线

通过微波辐照法一步合成了长1~3 μm, 直径30~100 nm的螺旋形纳米线, 实验结果表明它是由更细的纳米线组装成束的. 通过改变反应物浓度可以调控螺旋纳米线的直径和长度, 不同的镉盐对产物的结构与形貌有较大的影响. 讨论了螺旋形纳米线可能的形成机理.     

热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究

采用热丝CVD法在单晶Si衬底上进行了Si和Ge 薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析.结果表明:在衬底温度200 ℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0 cm-1;X射线半峰宽(FWHM)为5.04 cm-1.结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300 ℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3 cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220).研究表明热丝CVD是一种很好的低温外延薄膜的方法.